[IEEE TENCON 2013 - 2013 IEEE Region 10 Conference - Xi'an, China (2013.10.22-2013.10.25)] 2013 IEEE International Conference of IEEE Region 10 (TENCON 2013) - Impact of strain and DP position on the performance of Vertical Strained-SiGe Impact Ionization MOSFET incorporating dielectric pocket (VESIMOS-DP)
Saad, Ismail, Mohd. Zuhir, H., Bun Seng, C., Abu Bakar, AR, Bolong, N., Khairul, A.M, Bablu, Ghosh, Razali, IsmailYear:
2013
Language:
english
DOI:
10.1109/tencon.2013.6718466
File:
PDF, 675 KB
english, 2013