![](/img/cover-not-exists.png)
[IEEE International Electron Devices Meeting 1999. Technical Digest - Washington, DC, USA (5-8 Dec. 1999)] International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318) - Extraction of the gate oxide thickness of N- and P-Channel MOSFETs below 20 Å from the substrate current resulting from valence-band electron tunneling
Shanware, A., Shiely, J.P., Massoud, H.Z., Vogel, E., Henson, K., Srivastava, A., Osburn, C., Hauser, J.R., Wortman, J.J.Year:
1999
Language:
english
DOI:
10.1109/iedm.1999.824274
File:
PDF, 395 KB
english, 1999