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Growth kinetics and electronic properties of unintentionally doped semi-insulating GaN on SiC and high-resistivity GaN on sapphire grown by ammonia molecular-beam epitaxy
Tang, H., Fang, Z. Q., Rolfe, S., Bardwell, J. A., Raymond, S.Volume:
107
Year:
2010
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.3415527
File:
PDF, 775 KB
english, 2010