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Thermochemical stability of silicon–oxygen–carbon alloy thin films: A model system for chemical and structural relaxation at SiC–SiO[sub 2] interfaces
Wolfe, D. M., Hinds, B. J., Wang, F., Lucovsky, G., Ward, B. L., Xu, M., Nemanich, R. J., Maher, D. M.Volume:
17
Year:
1999
Language:
english
Journal:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
DOI:
10.1116/1.581745
File:
PDF, 856 KB
english, 1999