Spacer Removal Technique for Boosting Strain in n-Channel...

IEEE Electron Device Letters 2008 / 01 Vol. 29; Iss. 1

Spacer Removal Technique for Boosting Strain in n-Channel FinFETs With Silicon-Carbon Source and Drain Stressors

Liow, Tsung-Yang, Tan, Kian-Ming, Lee, Rinus T. P., Zhu, Ming, Hoe, Keat-Mun, Samudra, Ganesh S., Balasubramanian, N., Yeo, Yee-Chia
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Volume:
29
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2007.910779
Date:
January, 2008
File:
PDF, 192 KB
english, 2008
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