[IEEE 2010 IEEE 3rd International Nanoelectronics...

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[IEEE 2010 IEEE 3rd International Nanoelectronics Conference (INEC) - Hong Kong, China (2010.01.3-2010.01.8)] 2010 3rd International Nanoelectronics Conference (INEC) - Depth profiles and chemical bonding states of graded doping and ultra-thin HfLaO high-k dielectrics deposited on silicon substrate

Juan, Pi-Chun, Liu, Chuan-Hsi, Jou, Min, Chen, Yi-Kuan, Liu, Yu-Wei, Hsu, Chih-Wei, Chou, Yi-Hsien, Lin, Jun-You
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Year:
2010
Language:
english
DOI:
10.1109/inec.2010.5424647
File:
PDF, 309 KB
english, 2010
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