Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
2011 Vol. 29; Iss. 4
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Schottky-barrier height modulation of metal/In[sub 0.53]Ga[sub 0.47]As interfaces by insertion of atomic-layer deposited ultrathin Al[sub 2]O[sub 3]
Wang, Runsheng, Xu, Min, Ye, Peide D., Huang, RuVolume:
29
Year:
2011
Language:
english
Journal:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
DOI:
10.1116/1.3610972
File:
PDF, 608 KB
english, 2011