![](/img/cover-not-exists.png)
Effects of strained layer near SiO[sub 2]–Si interface on electrical characteristics of ultrathin gate oxides
Eriguchi, Koji, Harada, Yoshinao, Niwa, MasaakiVolume:
87
Year:
2000
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.372125
File:
PDF, 366 KB
english, 2000