InGaN multiquantum well structure with a reduced internal...

InGaN multiquantum well structure with a reduced internal electric field and carrier decay process by tunneling

Park, Y. M., Son, J. K., Chung, H. J., Sone, C., Park, Y.

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Volume:

Year:

2009

Language:

english

Journal:

Applied Physics Letters

DOI:

10.1063/1.3274137

File:

PDF, 545 KB

english, 2009

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