Formation of InAs/GaAs quantum dots by molecular beam...

Applied Physics Letters 1997 Vol. 71; Iss. 16

Formation of InAs/GaAs quantum dots by molecular beam epitaxy: Reversibility of the islanding transition

Lee, Hao, Lowe-Webb, Roger R., Yang, Weidong, Sercel, Peter C.
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Volume:
71
Year:
1997
Language:
english
Journal:
Applied Physics Letters
DOI:
10.1063/1.120062
File:
PDF, 384 KB
english, 1997
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