Characterization of heavily carbon-doped GaAs grown by...

Journal of Applied Physics 1992 Vol. 72; Iss. 3

Characterization of heavily carbon-doped GaAs grown by metalorganic chemical vapor deposition and metalorganic molecular beam epitaxy

Stockman, S. A., Höfler, G. E., Baillargeon, J. N., Hsieh, K. C., Cheng, K. Y., Stillman, G. E.
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Volume:
72
Year:
1992
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.351776
File:
PDF, 1.14 MB
english, 1992
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