Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures
1999 Vol. 17; Iss. 4
![](/img/cover-not-exists.png)
Strain in AlGaN layer studied by Rutherford backscattering/channeling and x-ray diffraction
Wu, M. F., Yao, Shude, Vantomme, A., Hogg, S. M., Langouche, G., Li, J., Zhang, G. Y.Volume:
17
Year:
1999
Language:
english
Journal:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
DOI:
10.1116/1.590780
File:
PDF, 365 KB
english, 1999