Exciton line broadening in ZnSxSe1−x epilayers grown on...

Journal of Applied Physics 1989 Vol. 66; Iss. 10

Exciton line broadening in ZnSxSe1−x epilayers grown on GaAs by molecular-beam epitaxy

Newbury, P. R., Shahzad, K., Petruzzello, J., Cammack, D. A.
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Volume:
66
Year:
1989
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.343767
File:
PDF, 1.35 MB
english, 1989
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