In-plane tensile-strained interfacial structure in a GaN...

Journal of Applied Physics 2001 Vol. 90; Iss. 5

In-plane tensile-strained interfacial structure in a GaN nucleation layer on sapphire(0001)

Kim, C. C., Je, J. H., Yi, M. S., Noh, D. Y., Ruterana, P.
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
90
Year:
2001
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.1388859
File:
PDF, 363 KB
english, 2001
Conversion to is in progress
Conversion to is failed