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In-plane tensile-strained interfacial structure in a GaN nucleation layer on sapphire(0001)
Kim, C. C., Je, J. H., Yi, M. S., Noh, D. Y., Ruterana, P.Volume:
90
Year:
2001
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.1388859
File:
PDF, 363 KB
english, 2001