Laser-annealing behavior of a phosphorus-implanted silicon...

Journal of Applied Physics 1979 Vol. 50; Iss. 5

Laser-annealing behavior of a phosphorus-implanted silicon substrate covered with a SiO2 film

Tamura, H., Miyao, M., Tokuyama, T.
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Volume:
50
Year:
1979
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.326296
File:
PDF, 377 KB
english, 1979
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