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Extremely low nonalloyed and alloyed contact resistance using an InAs cap layer on InGaAs by molecular-beam epitaxy
Peng, C. K., Chen, J., Chyi, J., Morkoç, H.Volume:
64
Year:
1988
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.341210
File:
PDF, 607 KB
english, 1988