Effects of electron–phonon interaction and chemical shift...

Effects of electron–phonon interaction and chemical shift on near-band-edge recombination in GaN

Germain, M., Kartheuser, E., Gurskii, A. L., Lutsenko, E. V., Marko, I. P., Pavlovskii, V. N., Yablonskii, G. P., Heime, K., Heuken, M., Schineller, B.
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Volume:
91
Year:
2002
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.1471368
File:
PDF, 374 KB
english, 2002
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