[IEEE International Technical Digest on Electron Devices - San Francisco, CA, USA (9-12 Dec. 1990)] International Technical Digest on Electron Devices - Design issues for achieving latchup-free, deep trench-isolated, bulk, non-epitaxial, submicron CMOS
Bhattacharya, S., Banerjee, S., Lee, J., Tasch, A., Chatterjee, A.Year:
1990
Language:
english
DOI:
10.1109/iedm.1990.237197
File:
PDF, 303 KB
english, 1990