Calculation of point defect concentrations in GaAs grown by...

Calculation of point defect concentrations in GaAs grown by molecular beam epitaxy

Ichimura, Masaya, Wada, Takao
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Volume:
72
Year:
1992
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.351806
File:
PDF, 612 KB
english, 1992
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