Homoepitaxial growth of CoSi2 and NiSi2 on (100) and (110)...

Homoepitaxial growth of CoSi2 and NiSi2 on (100) and (110) surfaces at room temperature

Tung, R. T., Schrey, F., Yalisove, S. M.
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Volume:
55
Year:
1989
Language:
english
Journal:
Applied Physics Letters
DOI:
10.1063/1.102338
File:
PDF, 622 KB
english, 1989
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