Characterization of majority and minority carrier deep...

Journal of Applied Physics 2008 Vol. 103; Iss. 6

Characterization of majority and minority carrier deep levels in p-type GaN:Mg grown by molecular beam epitaxy using deep level optical spectroscopy

Armstrong, A., Caudill, J., Corrion, A., Poblenz, C., Mishra, U. K., Speck, J. S., Ringel, S. A.
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Volume:
103
Year:
2008
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.2891673
File:
PDF, 378 KB
english, 2008
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