Fabrication of 1.4-kV mesa-type p[sup +]–n diodes with...

Applied Physics Letters 2003 Vol. 83; Iss. 2

Fabrication of 1.4-kV mesa-type p[sup +]–n diodes with avalanche breakdown and without forward degradation on high-quality 6H-SiC substrate

Tanaka, Yasunori, Nishizawa, Shin-ichi, Fukuda, Kenji, Arai, Kazuo, Ohno, Toshiyuki, Oyanagi, Naoki, Suzuki, Takaya, Yatsuo, Tsutomu
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
83
Year:
2003
Language:
english
Journal:
Applied Physics Letters
DOI:
10.1063/1.1591062
File:
PDF, 318 KB
english, 2003
Conversion to is in progress
Conversion to is failed