Characteristics of δ-doped InP heterostructures using In[sub 0.34]Al[sub 0.66]As[sub 0.85]Sb[sub 0.15] Schottky layer
Hsu, Wei-Chou, Lee, Ching-Sung, Lin, Yu-ShyanVolume:
91
Année:
2002
Langue:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.1421631
Fichier:
PDF, 550 KB
english, 2002