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Design and Optimization of 22 nm Gate Length High-k/Metal gate NMOS Transistor
Afifah Maheran, A H, Menon, P S, Ahmad, I, Shaari, S, Elgomati, H A, Salehuddin, FVolume:
431
Language:
english
Journal:
Journal of Physics: Conference Series
DOI:
10.1088/1742-6596/431/1/012026
Date:
April, 2013
File:
PDF, 484 KB
english, 2013