![](/img/cover-not-exists.png)
[IEEE 2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Yokohama, Japan (2014.9.9-2014.9.11)] 2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Numerical simulation of current noise caused by potential fluctuation in nanowire FET with an oxide trap
Furubayashi, Yuki, Ogawa, Matsuto, Souma, SatofumiYear:
2014
Language:
english
DOI:
10.1109/sispad.2014.6931598
File:
PDF, 469 KB
english, 2014