On the climb of dislocations in boron-ion-implanted silicon

On the climb of dislocations in boron-ion-implanted silicon

Wu, Wei-Kuo, Washburn, Jack
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Volume:
48
Year:
1977
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.324293
File:
PDF, 684 KB
english, 1977
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