Deep-defect-induced quenching effects in semi-insulating GaN layers detected by photoelectrical spectroscopic techniques
Witte, H., Krtschil, A., Lisker, M., Schrenk, E., Christen, J., Krost, A., Kuhn, B., Scholz, F.Volume:
82
Year:
2003
Language:
english
Journal:
Applied Physics Letters
DOI:
10.1063/1.1579556
File:
PDF, 234 KB
english, 2003