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Observation of semiconductor device channel strain using in-line high resolution X-ray diffraction
Holt, Judson R., Madan, Anita, Harley, Eric C. T., Stoker, Matt W., Pinto, Teresa, Schepis, Dominic J., Adam, Thomas N., Murray, Conal E., Bedell, Stephen W., Holt, MartinVolume:
114
Year:
2013
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.4824819
File:
PDF, 1.22 MB
english, 2013