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[IEEE IC's (ISPSD) - Barcelona, Spain (2009.06.14-2009.06.18)] 2009 21st International Symposium on Power Semiconductor Devices & IC's - A novel 80V-class HV-MOS platform technology featuring high-side capable 30V-gate-voltage drift-NMOSFET and a trigger controllable ESD protection BJT

Hiroki Fujii,, Shinichi Komatsu,, Masaharu Sato,, Toshihiko Ichikawa,
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Year:
2009
Language:
english
DOI:
10.1109/ispsd.2009.5158067
File:
PDF, 953 KB
english, 2009
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