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[IEEE 2007 International Semiconductor Device Research Symposium - College Park, MD, USA (2007.12.12-2007.12.14)] 2007 International Semiconductor Device Research Symposium - Comparative study of p+/n+ gate modified Saddle MOSFET and p+/n+ gate bulk FinFETs for sub-50 nm DRAM cell transistors
Ki-Heung Park,, Han, K. -R., Kim, Y. M., Choi, B. -K., Jong-Ho Lee,Year:
2007
Language:
english
DOI:
10.1109/isdrs.2007.4422285
File:
PDF, 159 KB
english, 2007