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Structural transformations and strain relaxation mechanisms of In0.6Ga0.4As islands grown by molecular beam epitaxy on GaAs(001) substrates
Tillmann, K., Gerthsen, D., Pfundstein, P., Förster, A., Urban, K.Volume:
78
Year:
1995
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.359897
File:
PDF, 2.02 MB
english, 1995