Very shallow p+-n junction formation by low-energy BF+2 ion...

Applied Physics Letters 1988 Vol. 52; Iss. 12

Very shallow p+-n junction formation by low-energy BF+2 ion implantation into crystalline and germanium preamorphized silicon

Ozturk, M. C., Wortman, J. J., Fair, R. B.
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Volume:
52
Year:
1988
Language:
english
Journal:
Applied Physics Letters
DOI:
10.1063/1.99242
File:
PDF, 514 KB
english, 1988
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