Atomic and carrier profiles of 1-, 2-, 4-, and 6-MeV 30Si...

Journal of Applied Physics 1989 Vol. 65; Iss. 8

Atomic and carrier profiles of 1-, 2-, 4-, and 6-MeV 30Si implanted into GaAs

Thompson, Phillip E., Wilson, Robert G., Ingram, David C., Pronko, Peter P.
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Volume:
65
Year:
1989
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.342715
File:
PDF, 720 KB
english, 1989
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