Probing Cu doped Ge[sub 0.3]Se[sub 0.7] based resistance switching memory devices with random telegraph noise
Soni, R., Meuffels, P., Petraru, A., Weides, M., Kügeler, C., Waser, R., Kohlstedt, H.Volume:
107
Year:
2010
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.3291132
File:
PDF, 987 KB
english, 2010