Molecular beam epitaxy of GaNAs alloys with high As content...

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures 2010 Vol. 28; Iss. 3

Molecular beam epitaxy of GaNAs alloys with high As content for potential photoanode applications in hydrogen production

Novikov, S. V., Staddon, C. R., Foxon, C. T., Yu, K. M., Broesler, R., Hawkridge, M., Liliental-Weber, Z., Walukiewicz, W., Denlinger, J., Demchenko, I.
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Volume:
28
Year:
2010
Language:
english
Journal:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
DOI:
10.1116/1.3368600
File:
PDF, 1.26 MB
english, 2010
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