Determination of band offsets in strained InAsxP1−x/InP quantum well by capacitance voltage profile and photoluminescence spectroscopy
Dixit, V. K., Singh, S. D., Porwal, S., Kumar, Ravi, Ganguli, Tapas, Srivastava, A. K., Oak, S. M.Volume:
109
Year:
2011
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.3561495
File:
PDF, 2.49 MB
english, 2011