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Scaling equivalent oxide thickness with flat band voltage (V[sub FB]) modulation using in situ Ti and Hf interposed in a metal/high-k gate stack
Choi, Changhwan, Lee, Jack C.Volume:
108
Year:
2010
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.3481453
File:
PDF, 579 KB
english, 2010