Improved performance of 4H-silicon carbide metal...

Materials Science in Semiconductor Processing 2015 / 03 Vol. 31

Improved performance of 4H-silicon carbide metal semiconductor field effect transistors with multi-recessed source/drain drift regions

Jia, Hujun, Pei, Xiaoyan, Sun, Zhelin, Zhang, Hang
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Volume:
31
Language:
english
Journal:
Materials Science in Semiconductor Processing
DOI:
10.1016/j.mssp.2014.11.046
Date:
March, 2015
File:
PDF, 945 KB
english, 2015
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