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[IEEE 2008 International Solid-State Circuits Conference - (ISSCC) - San Francisco, CA, USA (2008.02.3-2008.02.7)] 2008 IEEE International Solid-State Circuits Conference - Digest of Technical Papers - 65nm Low-Power High-Density SRAM Operable at 1.0V under 3¿ Systematic Variation Using Separate Vth Monitoring and Body Bias for NMOS and PMOS
Yamaoka, Masanao, Maeda, Noriaki, Shimazaki, Yasuhisa, Osada, KenichiYear:
2008
Language:
english
DOI:
10.1109/isscc.2008.4523218
File:
PDF, 611 KB
english, 2008