TEMAZ/O3 atomic layer deposition process with doubled...

TEMAZ/O3 atomic layer deposition process with doubled growth rate and optimized interface properties in metal–insulator–metal capacitors

Weinreich, Wenke, Tauchnitz, Tina, Polakowski, Patrick, Drescher, Maximilian, Riedel, Stefan, Sundqvist, Jonas, Seidel, Konrad, Shirazi, Mahdi, Elliott, Simon D., Ohsiek, Susanne, Erben, Elke, Trui, B
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Volume:
31
Year:
2013
Language:
english
Journal:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
DOI:
10.1116/1.4766281
File:
PDF, 2.34 MB
english, 2013
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