Charge trapping and detrapping characteristics in hafnium...

IEEE Electron Device Letters 2005 / 03 Vol. 26; Iss. 3

Charge trapping and detrapping characteristics in hafnium silicate gate stack under static and dynamic stress

Rino Choi,, Se Jong Rhee,, Lee, J.C., Byoung Hun Lee,, Bersuker, G.
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Volume:
26
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2004.842639
Date:
March, 2005
File:
PDF, 129 KB
english, 2005
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