Reflectance difference for in situ control of surface V/III...

Reflectance difference for in situ control of surface V/III ratio during epitaxial growth of GaAs

Jönsson, J., Paulsson, G., Samuelson, L.
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Volume:
70
Year:
1991
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.349513
File:
PDF, 935 KB
english, 1991
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