A comprehensive study of AlGaAs/GaAs beryllium- and carbon-doped base heterojunction bipolar transistor structures subjected to rapid thermal processing
Wang, Hong, Ing Ng, Geok, Zheng, Haiqun, Zhang, PenghuaVolume:
86
Year:
1999
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.371710
File:
PDF, 346 KB
english, 1999