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Current increase in thin gate-oxide (3.5–7.0 nm) metal–oxide–silicon structures with the boron-doped polycrystalline-silicon gates biased negatively
Itsumi, Manabu, Sato, Yoshiyuki, Nakayama, Satoshi, Muramoto, SusumuVolume:
82
Year:
1997
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.366201
File:
PDF, 408 KB
english, 1997