Oxygen precipitation in Czochralski silicon: Effect of...

Oxygen precipitation in Czochralski silicon: Effect of ramped anneal from 300 to 750 °C

Cui, Can, Yang, Deren, Ma, Xiangyang, Li, Ming
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Volume:
103
Year:
2008
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.2891218
File:
PDF, 637 KB
english, 2008
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