Oxygen precipitation in Czochralski silicon: Effect of ramped anneal from 300 to 750 °C
Cui, Can, Yang, Deren, Ma, Xiangyang, Li, MingVolume:
103
Year:
2008
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.2891218
File:
PDF, 637 KB
english, 2008