Hole trap level generation in silicon during rapid thermal annealing: Influence of substrate type and process conditions
Chabane-Sari, N.-E., Thibaud, L., Kaddour, S., Berenguer, M., Barbier, D.Volume:
71
Year:
1992
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.350952
File:
PDF, 883 KB
english, 1992