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[IEEE International Electron Devices Meeting 1991 [Technical Digest] - Washington, DC, USA (8-11 Dec. 1991)] International Electron Devices Meeting 1991 [Technical Digest] - Characteristics of 680 nm-visible laser diode with MQB grown by MOCVD
Motoda, T., Kadoiwa, K., Kimura, T., Nishimura, T., Uesugi, F., Kamizato, T., Arimoto, S., Tsugami, M., Mizuguchi, K.Year:
1991
Language:
english
DOI:
10.1109/iedm.1991.235393
File:
PDF, 240 KB
english, 1991