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Characteristic of rapid thermal annealing on GaIn(N)(Sb)As∕GaAs quantum well grown by molecular-beam epitaxy
Zhao, H., Xu, Y. Q., Ni, H. Q., Zhang, S. Y., Wu, D. H., Han, Q., Wu, R. H., Niu, Z. C.Volume:
99
Year:
2006
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.2164539
File:
PDF, 337 KB
english, 2006