Assessment of surface damage and sidewall implantation in AlGaN-based high electron mobility transistor devices caused during focused-ion-beam milling
Cullen, David A., Smith, David J.Volume:
104
Year:
2008
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.3006626
File:
PDF, 1.07 MB
english, 2008