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[IEEE 2011 IEEE International Electron Devices Meeting (IEDM) - Washington, DC, USA (2011.12.5-2011.12.7)] 2011 International Electron Devices Meeting - MOVPE III–V material growth on silicon substrates and its comparison to MBE for future high performance and low power logic applications
Mukherjee, N., Boardman, J., Chu-Kung, B., Dewey, G., Eisenbach, A., Fastenau, J., Kavalieros, J., Liu, W. K., Lubyshev, D., Metz, M., Millard, K., Radosavljevic, M., Stewart, T., Then, H. W., TolchinYear:
2011
Language:
english
DOI:
10.1109/iedm.2011.6131675
File:
PDF, 1.88 MB
english, 2011